Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

Energy relaxation probed by weak antilocalization measurements in GaN heterostructures

0 Spin relaxation in asymmetrical heterostructures

Electron spin relaxation caused by the D’yakonov-Perel’ mechanism is investigated theoretically in asymmetrical A3B5 heterostructures. The total spin relaxation anisotropy is demonstrated for a wide range of structure parameters and temperatures. The spin relaxation rates dependences are derived for GaAs-based heterojunction and triangular quantum well. The calculations show a few orders of mag...

Strain relaxation in InAs/GaSb heterostructures

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Temperature and density dependent solute vibrational relaxation in supercritical fluoroform

Temperatureand density-dependent vibrational relaxation data for the v6 asymmetric stretch of W~CO!6 in supercritical fluoroform ~trifluoromethane, CHF3! are presented and compared to a recent theory of solute vibrational relaxation. The theory, which uses thermodynamic and hydrodynamic conditions of the solvent as input parameters, shows very good agreement in reproducing the temperatureand de...

Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures

The interaction between interface plasmons within a doped substrate and quantum dot electrons or holes has been theoretically studied in double heterostructures based on covalent semiconductors. The interface plasmon modes, the corresponding dispersion relationship, and the intraband carrier relaxation rate in quantum dots are reported. We find the critical points in the interface plasmon densi...